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Grant Award View - GA74007-V2
Electrical contact engineering for next generation semiconductor devices
GA ID:
GA74007-V2
Agency:
Australian Research Council
Approval Date:
8-Apr-2020
Variation Publish Date:
2-Aug-2021
Variation Date:
27-Jul-2021
Category:
Science, Technology, Engineering and Mathematics (STEM) Research
Grant Term:
1-Jan-2021 to 31-Dec-2023
Value (AUD):
$338,184.00
(GST inclusive where applicable)
Varies:
GA74007
- Electrical contact engineering for next generation semiconductor devices
One-off/Ad hoc:
No
Aggregate Grant Award:
No
PBS Program Name:
ARC 19/20 Linkage
Grant Program:
Linkage Projects
Grant Activity:
Electrical contact engineering for next generation semiconductor devices
Purpose:
Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconductor interfaces; determining how ultra-shallow dopant profiles are affected by device structure and processing; and developing improved methods for measuring ultra-low contact resistivity. The research will be undertaken as a collaboration between researchers at the Australian National University and Applied Materials Ltd.
GO ID:
GO Title:
Linkage Projects for funding applied for in 2019
Internal Reference ID:
LP19 Round 1
Selection Process:
Targeted or Restricted Competitive
Confidentiality - Contract:
No
Confidentiality - Outputs:
No
Grant Recipient Details
Recipient Name:
The Australian National University
Recipient ABN:
52 234 063 906
Grant Recipient Location
Suburb:
ACTON
Town/City:
ACTON
Postcode:
2601
State/Territory:
ACT
Country:
AUSTRALIA
Grant Delivery Location
State/Territory:
ACT
Postcode:
2601
Country:
AUSTRALIA